Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

The formula for a perovskite compound is typically expressed as ABX3. These are crystalline structures that bond two cations ("A" and "B", divalent metal ion) to an anion ("X"); the "B" atoms tend to ...

(Nanowerk News) A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary ...

Technology is about to undergo a revolution that will alter how devices are utilized. A group of brilliant scientists from the Institute for Basic Science (IBS) in South Korea, led by the esteemed ...

Researchers review scientific advances of electrolyte-gated carbon nanotube field-effect transistor biosensors, which are characterized by superior electronic properties and intrinsic signal ...

“In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density ...