Abstract: In this study, pseudo-vertical GaN-on-Sapphire PiN diodes with different mesa radii were designed, fabricated and characterized. First, critical process stages, such as mesa etching, ohmic ...

Abstract: We present electrical and optical (at a wavelength of 850 nm) measurement results of SOI PIN-diodes without a front-gate, with an intrinsic Si film thickness of only 6 nm. These PIN-diodes ...

Laser levels are indispensable for ensuring measurement accuracy. We tested the best-selling models—see how they fared.

The device continues to operate during input voltage dips as low as 4V, at 100% duty cycle if needed. The 1.5µA sleep quiescent current, combined with output voltage regulation, extends operating ...

Many phones include simple games for the user to pass the time. The games referred to here are ones preinstalled on the phone and do not require a wireless connection to play. With mobile phones ...