This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public ...

A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...

Researchers have now found a way to manufacture single-molecule diodes that can perform 50 times better than previous diode designs. In a study published in the journal Nature Nanotechnology, ...