These characteristics make them ideal for high-speed switching circuits. The high-performance SiC diodes are also notable for their lowest reverse leakage (I R) in the industry, at 20µA (max.). This ...

TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO: 6502) Semiconductor & Storage Products Company today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...