In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...
Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...
Tech Xplore on MSN
Novel carbon nanotube-based transistors reach THz frequencies
Carbon nanotubes (CNTs), cylindrical nanostructures made of carbon atoms arranged in a hexagonal lattice, have proved to be promising for the fabrication of various electronic devices. In fact, these ...
The formula for a perovskite compound is typically expressed as ABX3. These are crystalline structures that bond two cations ("A" and "B", divalent metal ion) to an anion ("X"); the "B" atoms tend to ...
Engineeringness on MSN
Transistors Explained: Switching and Signal Amplification
This video explains how transistors work as switches and amplifiers in electronic circuits. Transistors control the flow of ...
Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...
Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...
A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...
The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
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