IEEE

Thermal Evaluation for Monolithic 3D Integrated Circuits Based on Gate-all-Around Transistors

Abstract: In this work, we proposed a monolithic 3D (M3D) integrated circuits (ICs) based on Gate-all-around field effect transistors (GAAFET), and the self-heating effect (SHE) of the M3D ICs is ...
EDN

100-V GaN transistors meet automotive standard

Infineon Technologies AG unveils its first gallium nitride (GaN) transistor family qualified to the Automotive Electronics Council (AEC) standard for automotive applications. The new CoolGaN ...
IEEE

Gate Drive Circuit Suitable for a GaN Gate Injection Transistor

Abstract: A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive ...