Jun'ya Tsutsumi (Researcher), Tatsuo Hasegawa (Principal Research Manager), and others of the Flexible Materials Base Team, the Flexible Electronics Research Center (Director: Toshihide Kamata), the ...

东京--(BUSINESS WIRE)--(美国商业资讯)--东芝公司(TOKYO:6502)旗下半导体与存储产品公司今日宣布推出新一代高效晶体管阵列“TBD62783A系列”，新一代产品搭载DMOS FET [1] 型源型输出(source-output)驱动器。该新系列将取代该公司的双极晶体管阵列“TD62783系列”，后者已广泛 ...

PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (Diodes) (Nasdaq: DIOD) has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500mA-rated open-drain transistors, where all ...

A false-colored scanning microscope image of a 10-FET transistor array. Red: Silicone elastomer; Green: PI; Light blue: SU8; Yellow: Gold; Grey: Silicon. Credit: Gu ...

A research team led by Professor Taesung Kim from the School of Mechanical Engineering at Sungkyunkwan University has developed hafnium oxide-based ferroelectric transistor arrays and successfully ...

(Nanowerk News) Professor Soon-Yong Kwon in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, in collaboration ...

This application note presents the ISL73096RH/ISL73127RH/ISL73128RH transistor arrays and focuses on designing RF amplifiers employing these featured transistor ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500mA-rated open-drain transistors, where all ...

The HFA3128 is an ultra high frequency transistor array that is fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated ...

(Nanowerk Spotlight) For over fifty years, the relentless miniaturization of silicon transistors has upheld Moore’s Law, delivering exponential leaps in computing power. However, this development ...