SAN FRANCISCO &#151 Researchers from the Israel Institute of Technology have developed what the university claims is a “transistor in a test tube”, built via sequence-specific molecular lithography.

Researchers at the IMEC research institute in Belgium are developing a transistor with a gate width of 22nm (0.022µm) and a gate thickness of 0.5nm to test out new materials for future commercial chip ...

There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

December 10, 2012. Silicon’s crown is under threat: The semiconductor’s days as the king of microchips for computers and smart devices could be numbered, thanks to the development of the smallest ...

The UA Power Group designed a silicon carbide-based motor drive for the hybrid version of a plane commonly used as an air ...