Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

Researchers at the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia have investigated whether the temperature coefficient of the short circuit current in perovskite-silicon ...

A. As noted in Art. 100 of the 2020 NEC: Fault Current, Available (Available Fault Current). The largest amount of current capable of being delivered at a point on the system during a short-circuit ...

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...