Since wireless radio transmissions were first achieved in the 1880s, telecommunications have evolved to the point where instant global communication is a daily reality, currently contributing more ...

Designed to reduce costs and space while increasing the efficiency of inverters found in solar, UPS, and motor-drive applications, the CID150660 co-pack power switch integrates a 6A/600V Schottky ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

The first Schottky barrier rectifiers based on Trench MOS technology can be used in rectification circuits or as OR-ing diodes in redundant switchmode power supplies. The five devices feature low ...

A group of researchers developed a highly sensitive rectifying element in the form of a nanowire backward diode, which can covert low-power microwaves into electricity. The new technology is expected ...

MALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low ...

The CMLSH2-4LC dual-pair Schottky diode is packaged in a SOT-563 surface-mount case. The device has two isolated pairs of 40V 200mA Schottky diodes in a common-cathode configuration. It has a 0.24V ...

USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

This document presents switching power supplies in focus. It tackles about the types, uses, functions and advantages of switching power supplies compared to the other ones. It also discusses some ...