Designed for switching applications requiring a low forward-voltage drop, the CMKSH2-4LR consists of three isolated Schottky diodes with a maximum continuous forward current of 200 mA per diode.

Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its rating is 135A, 91A 2 /s at 25°C, and 100A, 50A 2 ...

Infineon has expanded its CoolSiC Schottky diode 1200 V portfolio by adding six devices in a D²PAK real 2-pin package. Using SMD packages, designs can be more compact and more cost effective. Moreover ...

After lying dormant in research laboratories for decades, silicon carbide (SiC) is beginning to realize its potential as a substrate material. [Transistor After lying dormant in research laboratories ...

Malvern, Pa. — Vishay Intertechnology, Inc. has released a compact double-diode ESD protection array designed to protect dual high-speed USB ports or up to two other high-frequency signal lines ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

The diodes provide extremely low breakdown/turn-on voltages, making them suitable protectors of high-speed data lines with low voltage (-0.3 to +0.3V). Without performance degradation, they can safely ...

Littelfuse, Inc. introduced two new product series, the SP4044 and SP4045 Series TVS Diode Arrays (SPA® Diodes), designed to protect sensitive electronics Littelfuse, Inc. introduced two new product ...