This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

A South Korean research team has, for the first time, uncovered the molecular-level mechanism by which trace amounts of ...

A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...