我国海上风能资源丰富,可开发风能资源约是陆上资源的3倍。随着“3060”碳目标的确立和逐步落地,海上风电必将迎来更加广阔的发展空间。 与陆上风电相比,海上风电的生存环境更恶劣、可达性更差,所以风机由于故障停机导致的交通成本、运维成本和停机 ...
摘要:随着电力电子应用越发趋于高压与高功率密度,单个模块已经无法满足其需求,功率器件的并联应用由于其经济性与可行性成为了解决该矛盾的有效方法。然而,并联系统的总体布局无法达到完全的对称,使得理想化的静、动态电流分布难以实现进而限制 ...
The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...
A six-pack IGBT module can be paralleled to obtain higher power levels. New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new ...
IGBT芯片主要成本由原材料成本、制造成本及人工费用等构成。从国内主要上市企业来看,根据斯达半导招股说明书,其原材料主要包括芯片、DBC基板、铜底板、焊料、铝铜线、外壳及电源模组元器件等,其中芯片的采购主要通过自主研发设计并委托芯片代工企业 ...
IXYS Corporation announced the introduction of a new range of IGBT modules for high power applications. The new IXYS SIMBUS F module is an industry standard outline optimized for IGBT phase leg ...
根据头部IGBT厂商市场份额分析,欧洲地区约占IGBT芯片市场的35%,主要参与者有英飞凌、安森美、意法半导体等;亚太地区占 ...
IGBT failures are often caused by gap-types defects in or among the materials bonded to create the module. The defects may be voids, delaminations, disbonds, or may involve the tilting of a layer, ...
ISELIN, NJ--(Marketwired - Aug 18, 2016) - TDK Corporation today announced a new EPCOS DC link capacitor that has been specifically designed for the HybridPACK™ 1-DC6 Insulated Gate Bipolar Transistor ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...
Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...
Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...