“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...

三星电子近日宣布一项重大技术突破与未来愿景，就是计划将鳍式场效晶体管（FinFET）制程技术应用于NAND Flash闪存生产上。此动作被解读为三星为应对人工智能（AI）芯片组对更大容量NAND Flash闪存的需求所做的准备。不过，这项技术属于未来技术，实际应用仍需 ...

LAWRENCEVILLE, Ga.--(BUSINESS WIRE)--Silicon Creations, a leading provider of precision IP for advanced SoC design, today announced its 1000th production FinFET tapeout at TSMC, alongside the ...